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Thanks for your reply.
I am consider a common-source NMOS amplifier with a NMOS diode-connected load to Vdd.
I think body effect is not an assistance to increase gm, since the Vth increases.
The original gm should be reduced by gmb instead of increased by gmb after body effect introduced...
The impedance seen at the source of diode-connected NMOS is lower when body effect is included, from 1/gm to 1/(gm+gmb), is strange for me.
Body effect increases the Vth, so Ids should decrease for same Vgs=Vds(diode connected). That means the impedance should increase, right?
How come it decreases?
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