Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
Hi,
Hope everyone doing well. i am trying to simulating the Id-Vg curve for different TID (10krad- 1Mrad) for si, sio2, and their interface region. can anyone please guide me to solve this problem. i have attached picture which is my desired output.
Thank you
Sincerely
Hossain
Hi,
I would like to check TID effect of my Device Structure using Sentaurus. I checked built-in examples they used fixed charge method :
Physics (MaterialInterface= "Silicon/Oxide" ) { Traps (FixedCharge Conc=1e12) }
Physics (MaterialInterface= "Oxide" ) {Traps (FixedCharge Conc=2e17) }
how...
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
