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Q:Design a 3-transistor CMOS DRAM cell. Show that the read and write operation is functionally correct, capable of operating of at least 100 MHz, and consuming very minimal power.
(input rise time (10%-90%) and fall time (90%-10%) should be at most 1 ns.)
(0.35micron technology)
the information...
Q:Design a 3-transistor CMOS DRAM cell. Show that the read and write operation is functionally correct, capable of operating of at least 100 MHz, and consuming very minimal power.
(input rise time (10%-90%) and fall time (90%-10%) should be at most 1 ns.)
(0.35micron technology)
the information...
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