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instead of using opamp, i would recommend using cascode structure because when using opamp stability issue may arise if not compensate properly. However if the design is in low power, cascode structure might be a challenging task.
thanks raduga_in for clarify things. in addition to what you've said, the PTM model uses BSIM4 model. However the syntax is in SPICE format. advanced design system (ADS) can also read BSIM4 model. so it will understand all the parameter in the PTM. however the way (syntax) that all the parameter...
if you reffering to the 90nm PTM model, actually the parameter "xrcrg1" in the PTM is recognized as unknown cause there is some "unknown" character probably space before the "xrcrg1" parameter. so simply backspace it to delete the space character. then the simulator will recognize it.
please...
lambda in nmos current equation
quote from analysis and design of analog integrated circuits
"The parameter λ is inversely proportional to the effective channel length and a decreasing function of the doping level in the channel. Typical values of λ are in the range 0.05V-1 to 0.005V-1"
"The...
Re: Is this right ?
tanner tools has L-EDIT that can extract parasitic capacitance directly from the layout to SPICE netlist. However it only extract node parasitic capacitance with respect to the substrate.
magic can generate to gds. however you might want to refer to the foundry whether...
are you sure the maximum is 20um? probably that is digital process. please consult you foundry wheter they have others suitable process for analog circuit.
-evilguy-
Re: Is this right ?
i think the process is ok. but how reliable your layout editor can extract the layout is another issue (parasitic component etc.). If the layout editor that you use can extract the netlist that compatible with the ads i think nothing wrong with that.
-evilguy-
sorry about that. actually i want to varies the TOX parameter. according tu paper, the variation of oxide thickness in the range of 10%-20% from the nominal value. So assumption is made the the variation of oxide thinkness follows normal distribution. that is why the term 3σ=20%. means that the...
thanks. according to the paper i've read. the 20% parameter variation is equal to 3σ value. how i can use this information when i want to do monte carlo simulation. i mean the sintax in hspice.
Hi, i'm a bit puzzle in the term of sigma (σ) in the monte carlo simulation. what is σ, 2σ and 3σ represent when we do monte carlo simulation. σ in statiscal term represent standard deviation of random data. Is this term also similar in monte carlo simulation?
Then 2σ = 2*σ? and 3σ = 3*σ?
my...
thanks about the advice, but can you tell me why you suggested this? will there be a problem if the current mirror work in that region. Of course is it desired for current mirror to work in active region but i don't thing that mine can achieve active region cause there is not much voltage headroom.
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