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Thank you for replying. Unfortunately, argon is not used here to reduce channeling. Argon is implanted using low energy to create traps for charge storage.
Hello,
can somebody please tell me how to implant argon using silvaco?
The classic line "implant argon dose=1e16 energy=1 tilt=7 bca fullrot amorph" doesn't seem to work.
I'm trying to simulate a SONOS gate capacitor with n substrate. The idea is to charge it with FN or DT tunneling and then observe the CV. So far the code i've written is this:
go atlas
mesh width=1.0
x.m loc=0.0 spac=0.005
x.m loc=0.5 spac=0.005
y.m loc=-0.1 spac=0.02
y.m loc=-0.03...
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