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Hey everybody, I am a novice for the sentaurus. When I simulate the transfer characteristics of a MOSFET, the output window shows that "Error:get_ils_param handle should not be negtive!" And the drain current turns out to be "NAN" or "-NAN".
I don't know why. Any help would be appreciated!
Sentaurus Device simulation problem：Why are the inner and outer gate voltage not same
Hey everybody, I am a novice for the sentaurus, I am trying to use it to simulate a silicon-based MOSFET.
When I simulate the transfer characteristics of the device with the VGS=1.5V and VDS=0.05V, the drain...
Hi,everyone
hope everything going ok in ur life.
My project is on simulation of a junctoinless NMOSFET which has a gate length of 20nm using ATLAS.Recently,I've finished the work of simulating the electrical characters ,such as Vth,DIBL,S-S,etc.Now I'm trying to simulate the hot-carrier...
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