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I am working on a mosfet device in TCAD and I have electrical data(IV and CV).I would like to use the mosfet for circuit simulation in HSPICE.Can anybody guide me on how to extract parameters for HSPICE Simulation from IV and CV data which I obtained by device simulation.
RE:Bidirectional ESD SCR
ESD SCR operates as breakdown device during positive ESD and simple forward biased diode during negative ESD and provide protection . I would like to know why this SCR cannot be used as ESD Protection Device both for positive and negative ESD events at the pad.