I am trying to simulate S1G diode current Vs voltage graph with temperature as variable parameter. I have used equations Id = Is(Tmeas) * exp(((Vd-(Rs*Id))*q/(k*Tmeas*n))-)+(Gmin*Vd) where Is(Tmeas) = Is_nom* pow((Tmeas/Ta),(XTi/n))*exp(((1/Ta)-(1/Tmeas))*q*Eg/n/k) Ta - Ambient Temperature Tmeas - Temperature at which current value is required Id - Diode instantaneous current Is_nom - Reverse saturation current = 7.08264E-9 Is(Tmeas) - Reverse saturation current @ Tmeas Vd - Instantaneous diode voltage Rs - Diode series resistance = 0.0243166 ohms q - Charge of electron - 1.602E-19 k - Boltzmann's constant - 1.38062E-23 n - diode constant - 2 Gmin = 1E-12 Eg = 1.1eV XTi - Saturation current temperature exponent = 3 considered I am not getting values as per the graph shared by S1G diode supplier. I would like to know whether diode series resistance, Saturation current temperature exponent are temperature dependent? If so what equations I need to consider to derive Rs and XTi as temperature dependent. Also, would like to know if any parameters I need to consider to get exact values as in graph.