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In solution 1 I used a very simple series RLC circuit, with the R that represents the ESR with values changing with frequency, while L and C were kept constant. All these values come from a measurement of a single film cap.
So basically, the steps of solution 1 are:
- Run a simulation of Q3D of...
@FvM
I tried two solutions:
1) 3D model of the busbar in Ansys Q3D + equivalent circuit for each capacitor in Ansys Circuit Design, with each RLC circuit connected between pairs of Sources given by Q3D --> The simulated impedance has no peaks at all...
2) 3D model of the busbar + simplified 3D...
You got it right.. I thought that the extra peaks in ESR and Z curves are caused by inductive effects between close capacitors in the bank at different frequencies, but you are saying that the extra peaks are actually due to something happening in the inside of capacitors themselves. In your...
Thanks for your suggestion !
Actually I tried to simulate the "physical" busbar in Ansys Q3D and the capacitors connected to the busbar modeled as series RLC equivalent circuits, but in this way I'm not able to take into account the proximity effect between the capacitors, which may be the cause...
Thanks for your answer first of all !
Here below is an example of impedance and ESR measured curves vs frequency in the range 100Hz-->10MHz of 9 film capacitors connected in parallel between two busbars. As you can see, after the self-resonance frequency, there are some peaks in the ESR curve...
Hello everyone,
I need a suggestion about how to perform an accurate electromagnetic FEM simulation of capacitors in the frequency domain, in order to extract the impedance vs frequency curve, calculate the power losses at different frequencies in a wide frequency range (100Hz-->10MHz), map the...
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