indranichatterjee
Newbie level 1
1) how does the gate oxide thickness affect the performance (channel conductivity, subthreshold leakage) of mosfet?
2) If there is gate oxide (insulator) between the gate and the P-substrate(body of Nmos) then how can the conduction channel between the two n wells be formed?
2) If there is gate oxide (insulator) between the gate and the P-substrate(body of Nmos) then how can the conduction channel between the two n wells be formed?