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Doubt about precharging bit lines in SRAM cells

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spartacus2

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In SRAM cells, we usually precharge the bit lines. We may use the p-type devices to precharge to full VDD. But does it improve only the writes and reads for logic 1, and makes slow memory access for logic 0?
How can we handle the situation?
 

Re: Static RAM cells

some design charge the bit line to vdd/2 instead of vdd
 

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