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you need to use tox(thickness of oxide)
Cox=E0*Er/tox
E0=8.854e-12F/m
Er=3.9 for SiO2
Make sure you use tox in meters to end up with Cox with units F/m^2.
Usually Cox is written as F/(um)^2
Hi ,
Tox = 4E-9 m from PSpice model of TSMC's 180nm MOSFET process .
E0=8.85E-18 F/um (Jacop Backer : CMOS circuit design ... , pp114)
Er=3.97 , same book
Cox=E0*Er/tox
Cox=8.784E-15F/um²
If you are using the BSIM3v3 model, than you can use u0 as u. I noticed that u0 isn't defined in your model, so you can use the default values of u0.
For a NMOS: u0 = 670 cm^2/(V*s)
For a PMOS: u0 = 250 cm^2/(V*s)
u0 is defined as the Low-field surface mobility at 'tnom'. So from it's definition it is seen that there is a temperature dependence of u0. However, size of W and L of your transistor also have an influence on the value of u.
I found the default values for u0, by typing the command "spectre -help bsim3v3" on the command line (I'm assuming you are using candence to).
u0 is a surface mobility, which is different than the well
characterized and fairly consistent bulk mobility. It
depends a lot on surface (underside of gate ox) quality
and this is very process-variable.
For Tox, you may see reported an optical and/or an
electrical Tox in foundry data; electrical Tox may
include things like poly depletion making it generally
larger, but more accurate for device modeling, than
the optical Tox that inline controls tend to observe.
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