ysghur
Newbie level 1
I'm conducting the Silvaco Atlas 2D simulator for designing a high-k dielectric double-gate mosfet.
For beginning, I found a good example from the internet: www.silvaco.co.kr/examples/tcad/sec...This=true&TB_iframe=true&height=500&width=760
The authors have used HfO2 and SiO2 separately in order to compare their mobilities with equivalent oxide thickness (EOT).
However, I could not understand why the authors set the thickness of HfO2 = 4.888 nm to have its EOT of 2 nm while relative permittivity of HfO2=22 and SiO2=3.9 respectively.
I thought for the HfO2 to have EOT of 2nm, it should have 2 nmX4.888 / 3.9= 2.5nm.
Thank you in advance.
For beginning, I found a good example from the internet: www.silvaco.co.kr/examples/tcad/sec...This=true&TB_iframe=true&height=500&width=760
The authors have used HfO2 and SiO2 separately in order to compare their mobilities with equivalent oxide thickness (EOT).
However, I could not understand why the authors set the thickness of HfO2 = 4.888 nm to have its EOT of 2 nm while relative permittivity of HfO2=22 and SiO2=3.9 respectively.
I thought for the HfO2 to have EOT of 2nm, it should have 2 nmX4.888 / 3.9= 2.5nm.
Thank you in advance.