Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Drain Current Equation of MOSFET in Subthreshold Operation

Status
Not open for further replies.

Peiqii

Newbie level 6
Joined
Mar 10, 2016
Messages
13
Helped
0
Reputation
0
Reaction score
0
Trophy points
1
Activity points
91
May I know the equation of the drain current for MOSFET in subthreshold region.

As I know it has some exponential inside the eqn, but i could get it in any sources.
 

You may know it, I shall allow. But it's not clear what you are asking, equation itself or the source that you can refer. Since the latter covers the first I'm going to answer that: open Gray&Meyer Analysis and Design of Analog Integrated Circuits (The one I have is third edition) and on page 76 you'll find a surprise in equation 1.218. If you have a different edition just open the index and look for subthreshold, it's like googling but ancient.

Man, I'm trying too hard to be funny. I'm bored.
 

Hi Kemiyun,

Thanks for your sharing.
I could not get the 3rd version, but i get from the 5th version. Is this the equation u mentioned?

eqn.PNG

Btw how am i going to put Vt in equation? since i m going to create the graph as below.So i need know it value in order to fix some values such as C, f, CLoad to optimise the design.
graph.PNG
 

Btw how am i going to put Vt in equation?

Carefully.

You might have already noticed that there are two Vt's here. One is transistor's threshold voltage and the other one is the 25.8mV thing, I forgot its name, so put them in, don't ask me its value. It's not a question I can answer, look at the index of the same book to find out how to calculate it as it changes from design to design or with temperature and a lot of stuff.

Weird thing is the equation is almost the same in 3rd edition except in the one you shared it's Vgs - Vt and in my book it's only Vgs for the first exponential. This is a huge difference and I need to check.
 

The Vt is the threshold voltage of transistor while the VT is the thermal voltage which usually equal to 26mV. And VT = kT/q.

But there is one more 'It' inside the eqn. What is it?
 


One thing that I don't think anyone has mentioned yet is that the parameter n is process dependent.

n=1+ gamma/(2*sqrt(psi_sa))

If you're interested, gamma is the body effect parameter and psi_sa is approximated surface potential in depletion and weak inversion.

But the more "practical" piece of information is that typical range of values for n is 1 to 1.5.

For a VDS greater than several thermal voltages you can ignore the exponential with VDS as the contribution becomes negligible.

The equation that you have presented is correct for the source referenced subthreshold drain current model.
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top