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[SOLVED] bulk driven mosfet IC fabrication

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luca89

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Hi everyone , I m studying the bulk driven method for lowe power voltage analog circuits. in many books is written that the main issue to realize this method
is that it is possible to control the body of all PMOS or of all NMOS (on a die) depend if the fabrication process chosen is NWELL CMOS or PWELL CMOS.

**broken link removed** (end of pag 9 begin of pag 10)
http://www.eecg.toronto.edu/~kphang/papers/2003/gordon_bulkdrivencirc.pdf (slide 8 in the bottom)


By the way in internet I found that the CMOS fabrication process make available the body for PMOS and NMOS in one die. So what that sentence means?

thanks for all of you that will answer me.

Have nice day.
 

In single well process You can bias bulks of pmos (for nwell process, or nmos for pwell) separately. In modern process an option for deep well or triple well mosfets exists and then You can bias bulks of all mosfets separately. You have to check what your process provides to You.
 

In any single-well process one of those is the substrate and
this is a poor-quality common connection. Drive one body,
drive them all. Probably not the plan.

More complex FEOL flows can give you N and P wells both
reverse-biased-junction isolated. These, you may drive
independently. Bearing in mind that your body driven
MOSFET can easily show its ugly base driven parasitic
BJT (injecting well or substrate currents to cause some
trouble nearby but unanticipated).

Just because you have access doesn't mean that
touching it will make good things happen.
 

THank you very much , everything was clear.
 

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