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Layout-dependent effect: help to recognize.

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Hello all.

I am confused by one layout dependent affect.

I know about:
"Poly-to-Poly Spacing Effect" (=PSE),
"Length of Diffusion" (LOD =STI ="Shallow Trench Isolation" effect)
"Well Proximity Effect" (WPE).

But what may bring into layout the minimum "channel - to - bulk_contact" spacing?
(Please see attached picture)
Image 2.jpg
Why should I keep this space enlarge?
What is the name for this effect?

Thank you.
 

Channel to bulk contact spacing is generally an ESD/LU concern and should be in your DRC rule deck. When I used to write DRC rules I would ensure the entire channel was within the required proximity to the contact.

If you are doing some high precision analog/RF work, then you may need to match each channel to bulk contact. In your case a strip on contacts above and/or below your nmos devices will suffice.
 

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