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[moved] Why forming gas contains nitrogen?

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alyast

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I know that forming gas anneal leads to passivation of dangling bond on SiO2/Si interface. Forming gas contains 95% of nitrogen and 5% of hydrogen. Why not 100% of hydrogen. I heard that nitrogen is fairly intert but doesn't it will form oxynitride when in contact with silicon oxide at anneal temperatures?
 

doesn't it will form oxynitride when in contact with silicon oxide at anneal temperatures?
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Unlikely.

A trivial reason not to use hydrogen might be that all possible mixtures with air should be non-incendive. So no safety measures are required.
 

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