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i googled and it took only 10 seconds to find this :
Resistance reflection rule: Resistance looking into the base is (b +1) times total emitter resistance.
it is from the document "BJT Amp.pdf"
In other words: an amplifying BJT with variable load at emitter will transform the load resistance back to the base of the BJT by multiplying it with the (BJT gain +1).
Imagine a BJT as emitter follower. lets say b = 100. So with a collector currrent of 100mA you need 1 mA at the transistor´s base, at emitter you will see 101mA.
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