Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

genius tcad toll

Status
Not open for further replies.

mini11

Newbie level 2
Joined
Mar 4, 2014
Messages
2
Helped
0
Reputation
0
Reaction score
0
Trophy points
1
Activity points
14
Hello,
I am trying to write a python process code for 40nm double gate soi n- channel mosfet and have got stuck with some parameters which are :
vertical and lateral characteristic length of source/drain doping, Rmax and Rmin of source/drain doping, offset length i.e source/drain implant measured from poly edge, well doping concentration, Rmax and Rmin of well doping, vertical and lateral characteristic length of well doping.Can someone kindly tell me where i can find the values of these parameters .
These parameters are required in writing the function for source/drain doping.
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top