Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Difference between "1/gm" and "r"

Status
Not open for further replies.

haideruet

Newbie level 4
Joined
Apr 21, 2009
Messages
7
Helped
0
Reputation
0
Reaction score
0
Trophy points
1
Activity points
0
Hi,
I am Little confused between the two terms , 1/gm and rd
some times when calculating output impedance we use 1/gm and some times we say it is rd.
when diode connected load is considered.
What is the basic story and when each may be considered while designing CMOS circuits.

I am new to CMOS circuits. I read razavi book several times. but I did not find this answer.

Thanks
Hayder
 

For a single (isolated) transistor, I think the drain output impedance rd is identical to 1/gm . In practical circuits, however, transistors are never alone, so - depending on the circuit - rd can also be influenced - independently of 1/gm - by other devices connected to the other nodes of the MOSFET, e.g. by the presence of a source series resistor.

I hope somebody can explain this in more detail - with an equation.
 
Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top