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Req: TSMC 0.18um process parameters

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wave-maniac

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tsmc 0.18um process

I'm looking for TSMC 0.18um process parameters, such as the thickness of metal layers, permittivity and permeability of substrate, oxide layers, etc. I need the info to set up a 3D simulation for spiral inductors. Any help would be gratefully appreciated.
 

0.18 um process

try www.mosis.org and electrical parameter link. look at their run sheets. You'll get all of your questions answered from their data sheets. thanks.
 

tsmc dielectric constant

wave-maniac said:
I'm looking for TSMC 0.18um process parameters, such as the thickness of metal layers, permittivity and permeability of substrate, oxide layers, etc. I need the info to set up a 3D simulation for spiral inductors. Any help would be gratefully appreciated.
Click to expand...


there u go!

**broken link removed**
:-D
 

tsmc parameters

Dear chinito & v_naren,

I really appreciate your replies and efforts to help me. Unfortunately the info on thickness of different metal layers and the dielectric constant, needed to model the spiral inductors, is not mentioned in any of the files there in the abovementioned link.

Best regards
 

tsmc 0.18 substrate model

Parameters you are looking for vary a little from one manufacturer to another. You must contact with one of them for such information. You can send an e-mail to the addresses below:
Code: 
mosis-info@mosis.org | [email]webmaster@mosis.org[/email]

Maybe they can help you more.

Sorry that I can not help you.
 

tsmc 18 parameter

wave-maniac said:
Dear chinito & v_naren,

I really appreciate your replies and efforts to help me. Unfortunately the info on thickness of different metal layers and the dielectric constant, needed to model the spiral inductors, is not mentioned in any of the files there in the abovementioned link.

Best regards
Click to expand...

I highly doubt that any foundry wil reveal their "material information" such as the dielectric constant and all......isnt that supposed to be their secret and all?
 

0.18m process

Dear v_naren,

I have seen such data for other processes and technologies. Otherwise, who would be able to model passive features inside an IC, particularly RF type? At least the info on thickness of various metal layers are needed if one is going to use generally known dielectric constant value for silicon.
 

tsmc process parameters

I think there should be a design manual for the process that describe the parameters.
One way to get the S-parameters for an inductor is to layout the inductor in Cadence, and import in to ADS momentum to do the EM simulation.
 

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