wyattmengy
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Hi everyone,
I'm a bit confused with the different concepts of the "breakdown" of FETs. On Sedra & Smith (for those of you aren't in Canada, this book is pretty much the bible of fundamental IC designs in here), I understood three kinds of breakdowns well: weak-avalanche, punch-through, and gate-drain breakdown. However, I came across this term, "reverse gate leakage current". What's this? Is it a part of any of the three terms defined in Sedra & Smith?
Also, in a common-source power amplifier, what kind of breakdown can cause the drain current to flow in opposite direction (negative iDS, that flows from source to drain)?
Thanks!
I'm a bit confused with the different concepts of the "breakdown" of FETs. On Sedra & Smith (for those of you aren't in Canada, this book is pretty much the bible of fundamental IC designs in here), I understood three kinds of breakdowns well: weak-avalanche, punch-through, and gate-drain breakdown. However, I came across this term, "reverse gate leakage current". What's this? Is it a part of any of the three terms defined in Sedra & Smith?
Also, in a common-source power amplifier, what kind of breakdown can cause the drain current to flow in opposite direction (negative iDS, that flows from source to drain)?
Thanks!