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That’s a schematic of a class E amplifier.
It consists of a IRFD110 MOSFET transistor, a shunt capacitance Co (the transistor internal capacitance), a series L2C1 circuit, a Pi-Network filter (C2/C3, L3, C4) , R2 resistor, antenna . The shunt capacitor Co is made up by the internal output capacitance of the transistor. The transistor in this case operates as a switch and drives the load network Co, C1, L2, Pi-network, R2. The design of this load network is done such that the voltage and current through the drain of the transistor are out of phase while power is delivered to the R2||antena. This offset implies that no power is dissipated in the transistor, thus the efficiency is ideally 100%. The matching network primary purpose is to filter-out internally generated harmonics of the fundamental frequency due to the non-linear class E amplifying-device (bias conditions necessary for high efficiency).
http://www.ieice.org/proceedings/ITC-CSCC2008/pdf/p981_H6-1.pdf
http://www.classeradio.com/theory.htm
http://www.classeradio.com/rfvalues.htm
http://en.wikipedia.org/wiki/Electronic_amplifier