Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

[MOVED]TSMC CMOS 180nm Maximum VDD

Status
Not open for further replies.

lambchops511

Member level 1
Joined
Oct 10, 2011
Messages
38
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,286
Activity points
1,539
Hi all,

I am designing for the TSMC 180nm.

What is the maximum VDD I can use?

If I make my transistor width to 250nm, can I increase my VDD? or would I have to use the TSMC 250nm process for that?

Generally, if I use TSMC 180nm, but I create some of my transistors as L=250nm, then I can basically treat it as TSMC 250nm.. correct?

Many Thanks.
 
Last edited:

Generally, if I use TSMC 180nm, but I create some of my transistors as W=250nm, then I can basically treat it as TSMC 250nm.. correct?
No, not at all!

1. Not the width W is controlling the electric field strength, but the length L , i.e. you have to increase min. L !
2. The gate oxide thickness tox limits Vgs and Vgb, i.e. you are (possibly) not allowed to use a Vgs=2.5V . Ask the foundry!
 
whoops. i had a typo in the original post . I meant L=250nm not W=250nm.

How would I ask the foundry? Like find a contact email on TSMC website?
 

How would I ask the foundry? Like find a contact email on TSMC website?
Yes; Vgs(max) should also be found in the PDK docu. And they might offer a 2.5V option for their 180nm process (means: 2 different oxide thicknesses, more masks, 10-20% more expensive).
Also, mosis could possibly give you this info.
 
Last edited:

thanks for the reply. seems like I need to use 350nm for the 5V vdd.
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top