liletian
Full Member level 6
Hi Guys
In those days, it seems that the power amplifier area is still controlled by bipolar device. I am wondering what is the advantages of the bipolar device compared with CMOS devices in RF front end?
for PA, bipolar device will be have mobility and maybe high breakdown voltage(is it true) and thus can handle high power compared with CMOS devices.
Can anyone comment on this?
For LNA, is there performance advantages of bipolar compared with CMOS device in frequency range lower than 10GHz?
It seems that as the CMOS continueing scaling down, the frequency and NF of the CMOS devices get better and better. Is bipolar still competitive in LNA applications even in high performance application?
Thanks
In those days, it seems that the power amplifier area is still controlled by bipolar device. I am wondering what is the advantages of the bipolar device compared with CMOS devices in RF front end?
for PA, bipolar device will be have mobility and maybe high breakdown voltage(is it true) and thus can handle high power compared with CMOS devices.
Can anyone comment on this?
For LNA, is there performance advantages of bipolar compared with CMOS device in frequency range lower than 10GHz?
It seems that as the CMOS continueing scaling down, the frequency and NF of the CMOS devices get better and better. Is bipolar still competitive in LNA applications even in high performance application?
Thanks