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Can deep trench isolation technology be used in RF design?

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Hi everyone:

I'm designing a RF circuit including modules such as LNA\VCO\MIXER\filter.....。
when I design layout of all chip, I want to use deept trench to obtain more effective isolation. but I know deep trench ususally is used in bipolar devices.
I use SiGe process to design my layout, Can I use deep trench to isolate different module such as LNA and VCO? ( deep trench is spported by the foundry)

each module is surrounded by P+ grardring, I want to use deep trench between P+ guardring of each module.

is my viewpoint resonable?
any reply will be appreciated.
thanks a lot!
 

Deep trench is widely used for RF when available. It is a common practice.

Mazz
 

thanks Mazz.

but my problem is I want to use deep trench to isolate each RF block，such as LNA/VCO/mixer.....

some times I think this isolation maybe useful, especially for RF, but now I'm afraid this deep trench will worsen the RF.
so I want to know the reason or Principle of deep trench isolation in RF,

would you please provide any document about it?

thanks a lot!
 

I don't have any document, "only" direct experience.

Usage of deep trench on single devices (already available in our library) and around critical blocks has been successful.

Hope it can help

Mazz
 

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