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How to find out the dopants' concentration from a Hspice library?

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wangmengde

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Say, I want to find the n+ active region's dopant concentration inside a P well, which key word I should use to look for the concentration?
 

If you think of the channel doping concentration: this is NCH
 

wangmengde said:
Say, I want to find the n+ active region's dopant concentration inside a P well, which key word I should use to look for the concentration?
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NCH is the p-well concentration under the gate not the S/D of the NFETs which is what n+ usually refers to:
- often you won't find this in a model, foundries are known to avoid specifying this sort of details and SPICE provides ways around it by specifying dependent parameters
- the S/D region -if this is what you are interested in- has tailoring/halo implants around the gate which make these parameters not as straightforward to use
- the name of the drain/source doping in BSIM3 would be ND
- you might be able to get a decent estimate by using the derivative of the inverse square depletion capacitance wrt bias voltage but you have to make assumption on the junction profile that can make your answer change by quite a bit
 

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