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Lack of convergence - thermodynamic symulation is Sentaurus Device

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Skynet1987

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Hello

I have a problem with Thermodynamic symulation in Sentaurus Device. I've adopted command file which is a example how to use this kind of symulation. I've changed model of transistor. Originally was nMOS, but I use my own model - three dimensional double gate transistor. Problem is lack of convergence and lattice temperature (or because of this lack of convergence is appeared). Simulation failed when drain voltage is 28 mV and lattice temperature 1400K, where source, gate1, gate2 voltage is 0V. Below I put files

cmd file:



Code:
File {
   * input files:
   Grid="3D_N_r40o4_s4e+17_p5e+18_msh.tdr"
   Parameter="pp51_des.par"
   * output files:
   Plot=   "n51_des.tdr"
   Current="n51_des.plt"
   Output= "n51_des.log"

   NewtonPlot = "n51_des_newton.tdr"
}


Electrode {
	{ Name="Source" 		Voltage=0.0 Resistor= 40 }
	{ Name="Drain"  		Voltage=0.0 Resistor= 40 }
	{ Name="Gate1" 		Voltage=0.0 }
	{ Name="Gate2" 		Voltage=0.0 }
	{ Name="SourceBot" 	Voltage=0.0 }
	{ Name="DrainBot"  	Voltage=0.0 }
	{ Name="Gate1Bot" 	Voltage=0.0 }
	{ Name="Gate2Bot" 	Voltage=0.0 }
}

Thermode {
	{ Name = "Source"	Temperature = 300 SurfaceResistance=2e-4 }
	{ Name = "Drain"	Temperature = 300 SurfaceResistance=2e-4 }
	{ Name = "Gate1"	Temperature = 300 SurfaceResistance=2e-4 }
	{ Name = "Gate2"	Temperature = 300 SurfaceResistance=2e-4 }
}

Physics{
   Thermodynamic
   RecGenHeat
   Hydrodynamic( eTemperature
 )  
   EffectiveIntrinsicDensity(BandGapNarrowing ( OldSlotboom ))
}

Physics(Material="Silicon"){
   eQuantumPotential

   Mobility(
	   DopingDep
      PhuMob
      eHighFieldSaturation
      Enormal
   )
	Recombination(
    	SRH( DopingDep TempDependence )
  )

}

Insert= "PlotSection_des.cmd"
Insert= "MathSection_des.cmd"

Solve {
*- Creating initial guess:
   Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson eQuantumPotential
 } 
   Coupled { Poisson eQuantumPotential Electron
 }
   Coupled { Poisson eQuantumPotential Electron eTemperature Temperature
 }

*- Ramp to drain to Vd
   Quasistationary( 
      InitialStep= 1e-2 Increment= 1.35 
      MinStep= 1e-5 MaxStep= 0.2 
      Goal { Name="Drain" Voltage=1.25
} 
   ){ Coupled { Poisson eQuantumPotential Electron eTemperature Temperature
 } } 

 
*- Vg sweep 
   NewCurrentFile="IdVg_" 
   Quasistationary( 
      DoZero 
      InitialStep= 1e-3 Increment= 1.5 
      MinStep= 1e-6 MaxStep= 0.04 
      Goal { Name="Gate1" Voltage=1.25
 } 
   ){ Coupled { Poisson eQuantumPotential Electron eTemperature Temperature
 } 
      CurrentPlot( Time=(Range=(0 1) Intervals= 30)  )
   }
}

Math file
Code:
Math {
   Extrapolate
   Notdamped= 100
   Iterations= 25
   ExitOnFailure

   Number_Of_Threads= maximum
	
	Method=ILS
	
   *Cnovergence
   ExtendedPrecision
   #IncompleteNewton
   CNormPrint
	
}

Plot section

Code:
Plot{
*--Density and Currents, etc
   eDensity hDensity
   TotalCurrent/Vector eCurrent/Vector hCurrent/Vector
   eMobility hMobility
   eVelocity hVelocity
   eQuasiFermi hQuasiFermi

*--Temperature 
   eTemperature Temperature hTemperature
   RecombinationHeat eJouleHeat hJouleHeat
   lHeatFlux
   TotalHeat

*--Fields and charges
   ElectricField/Vector Potential SpaceCharge

*--Doping Profiles
   Doping DonorConcentration AcceptorConcentration

*--Generation/Recombination
   SRH Band2Band * Auger
   * AvalancheGeneration eAvalancheGeneration hAvalancheGeneration

*--Driving forces
   eGradQuasiFermi/Vector hGradQuasiFermi/Vector
   eEparallel hEparallel eENormal hENormal

*--Band structure/Composition
   BandGap 
   BandGapNarrowing
   Affinity
   ConductionBand ValenceBand
   eQuantumPotential hQuantumPotential

*--Gate Tunneling
   * eBarrierTunneling hBarrierTunneling  BarrierTunneling
   * eDirectTunnel hDirectTunnel
}

Source of heat is located near gates, but volatge at this contact is constant.
 

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