Skynet1987
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Hello
I have a problem with Thermodynamic symulation in Sentaurus Device. I've adopted command file which is a example how to use this kind of symulation. I've changed model of transistor. Originally was nMOS, but I use my own model - three dimensional double gate transistor. Problem is lack of convergence and lattice temperature (or because of this lack of convergence is appeared). Simulation failed when drain voltage is 28 mV and lattice temperature 1400K, where source, gate1, gate2 voltage is 0V. Below I put files
cmd file:
Math file
Plot section
Source of heat is located near gates, but volatge at this contact is constant.
I have a problem with Thermodynamic symulation in Sentaurus Device. I've adopted command file which is a example how to use this kind of symulation. I've changed model of transistor. Originally was nMOS, but I use my own model - three dimensional double gate transistor. Problem is lack of convergence and lattice temperature (or because of this lack of convergence is appeared). Simulation failed when drain voltage is 28 mV and lattice temperature 1400K, where source, gate1, gate2 voltage is 0V. Below I put files
cmd file:
Code:
File {
* input files:
Grid="3D_N_r40o4_s4e+17_p5e+18_msh.tdr"
Parameter="pp51_des.par"
* output files:
Plot= "n51_des.tdr"
Current="n51_des.plt"
Output= "n51_des.log"
NewtonPlot = "n51_des_newton.tdr"
}
Electrode {
{ Name="Source" Voltage=0.0 Resistor= 40 }
{ Name="Drain" Voltage=0.0 Resistor= 40 }
{ Name="Gate1" Voltage=0.0 }
{ Name="Gate2" Voltage=0.0 }
{ Name="SourceBot" Voltage=0.0 }
{ Name="DrainBot" Voltage=0.0 }
{ Name="Gate1Bot" Voltage=0.0 }
{ Name="Gate2Bot" Voltage=0.0 }
}
Thermode {
{ Name = "Source" Temperature = 300 SurfaceResistance=2e-4 }
{ Name = "Drain" Temperature = 300 SurfaceResistance=2e-4 }
{ Name = "Gate1" Temperature = 300 SurfaceResistance=2e-4 }
{ Name = "Gate2" Temperature = 300 SurfaceResistance=2e-4 }
}
Physics{
Thermodynamic
RecGenHeat
Hydrodynamic( eTemperature
)
EffectiveIntrinsicDensity(BandGapNarrowing ( OldSlotboom ))
}
Physics(Material="Silicon"){
eQuantumPotential
Mobility(
DopingDep
PhuMob
eHighFieldSaturation
Enormal
)
Recombination(
SRH( DopingDep TempDependence )
)
}
Insert= "PlotSection_des.cmd"
Insert= "MathSection_des.cmd"
Solve {
*- Creating initial guess:
Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson eQuantumPotential
}
Coupled { Poisson eQuantumPotential Electron
}
Coupled { Poisson eQuantumPotential Electron eTemperature Temperature
}
*- Ramp to drain to Vd
Quasistationary(
InitialStep= 1e-2 Increment= 1.35
MinStep= 1e-5 MaxStep= 0.2
Goal { Name="Drain" Voltage=1.25
}
){ Coupled { Poisson eQuantumPotential Electron eTemperature Temperature
} }
*- Vg sweep
NewCurrentFile="IdVg_"
Quasistationary(
DoZero
InitialStep= 1e-3 Increment= 1.5
MinStep= 1e-6 MaxStep= 0.04
Goal { Name="Gate1" Voltage=1.25
}
){ Coupled { Poisson eQuantumPotential Electron eTemperature Temperature
}
CurrentPlot( Time=(Range=(0 1) Intervals= 30) )
}
}
Math file
Code:
Math {
Extrapolate
Notdamped= 100
Iterations= 25
ExitOnFailure
Number_Of_Threads= maximum
Method=ILS
*Cnovergence
ExtendedPrecision
#IncompleteNewton
CNormPrint
}
Plot section
Code:
Plot{
*--Density and Currents, etc
eDensity hDensity
TotalCurrent/Vector eCurrent/Vector hCurrent/Vector
eMobility hMobility
eVelocity hVelocity
eQuasiFermi hQuasiFermi
*--Temperature
eTemperature Temperature hTemperature
RecombinationHeat eJouleHeat hJouleHeat
lHeatFlux
TotalHeat
*--Fields and charges
ElectricField/Vector Potential SpaceCharge
*--Doping Profiles
Doping DonorConcentration AcceptorConcentration
*--Generation/Recombination
SRH Band2Band * Auger
* AvalancheGeneration eAvalancheGeneration hAvalancheGeneration
*--Driving forces
eGradQuasiFermi/Vector hGradQuasiFermi/Vector
eEparallel hEparallel eENormal hENormal
*--Band structure/Composition
BandGap
BandGapNarrowing
Affinity
ConductionBand ValenceBand
eQuantumPotential hQuantumPotential
*--Gate Tunneling
* eBarrierTunneling hBarrierTunneling BarrierTunneling
* eDirectTunnel hDirectTunnel
}
Source of heat is located near gates, but volatge at this contact is constant.