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mobility of NMOS and PMOS for 90nm

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That depends on the technology you are designing. What is exactly your need? Why you ask for the mobility? Do you build a model for a specific application/case study?

D.
 
I used to think that you can find it in your SPICE model.
 

Usually NMOS mobility is bigger than PMOS's.
 

Hi faiq khalid lodhi,

Considering a 90 nm CMOS Technology (@ 300k)

For NMOS: U0 ~ 485 [μA/V*V]
For PNMOS: U0 ~ 106 [μA/V*V]

However, keep in mind that these are approximate values. These values depend on process, temperature, ...
 
These values are quite trustable, I think. They're very close to those extracted from my link given above:

µ0(NMOS) = 500 μA/V²
µ0(PMOS) = 117 μA/V²
 
I think mobility also depends on doping, temperature and etc.
Electron mobility is always bigger than hole mobility (and not only in Si).
 

thankx for all who help me in order to find out the mobility of 90nm technology.

i have found the following values in my SPICE model.
µ0(NMOS) = 500 μA/V²
µ0(PMOS) = 200 μA/V²

which are similar to the values that Erikil has posted in this thread.

and by using this i have to calculate the Cox for NMOS and PMOS and that are 13.9X10^-9 pF/um for pMOS and for nMOS 14.8X10^-9 pF/um.

by using all these values i found out the wp/wn and that is 2.66.

can anybody tell me whether it is correct for the above mentioned values?

---------- Post added at 12:24 ---------- Previous post was at 12:23 ----------

thankx for the link.
 

erikl said:
Electron mobility is always bigger than hole mobility (and not only in Si).
I think mobility also depends on doping, temperature and etc.
This is true; still electron mobility is bigger than hole mobility at comparable doping & temperature.
Just think what "holes" really are: electrons with a lot of stopovers ;-)

---------- Post added at 15:56 ---------- Previous post was at 15:43 ----------

thankx for all who help me in order to find out the mobility of 90nm technology.

i have found the following values in my SPICE model.
µ0(NMOS) = 500 μA/V²
µ0(PMOS) = 200 μA/V²

which are similar to the values that Erikil has posted in this thread.
Not really: compare our µ0p values!

by using all these values i found out the wp/wn and that is 2.66.

can anybody tell me whether it is correct for the above mentioned values?

From palmeiras' and from MOSIS data values, a factor of ≈4 is more plausible (for 90nm process).
 

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