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how to get parameter values for mos for manual calculation in cadence

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dipanjan

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hi,i am trying to design an opamp.so for the various calculations like say w/l of the various transistors i need values for the various parameters like lambda,k,vth etc for both nmos and pmos used in the design.
there are scs files but they provide multiple values for each parameter under multiple sections.
my questions aree
!) what is the meaning of these sections what do they signify.
2)is it ok to use these values or shud i calculate thm for circuits manually....say lambda can be ca lculated from I-V characteristics plot so can the others.
 

You have to do a simple thing called MOSFET characterization. You basically vary VDS and VGS to get a set of I-V curves. From those you can extract all the process parameters needed for your hand calculations.

The data you see in those .scs files is for BSIM3v3. You see, MOSFETs are represented mathematically using the BSIM model. The data you see there is different for different processes (180nm, 0.35u, ST, TSMC etc). That data is given by the fab guys to represent how your transistors will work when you use their fab.

That data is plugged into the BSIM model by the simulator to simulate the behavior of the MOSFET. You can also get the process parameters from the .scs file by using the BSIM equations, google for them.
 

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