patriot
Member level 5
Hi, guys:
For an X-band MMIC LNA with phemt, can the gate be biased with TFR(thin-film resistor) instead of inductor & microstip, since the TFR can save much die area.
I found the TFR model in the design kit is very different from resistor, E.G. a 20K ohm resistor will be no more than 1K ohm @10GHz. When do circuit simulation with model in ADS, the LNA will work still; but when doing full EM simulation with Momentum, the resistor will lead cuirt failure, even the DC current is not correct.
Gate biasing with resistor will work in LNA lower than 3GHz (I have verified), though,
I am afraid resistor can not be used for gate baising in high frequency such as X band?
Can anybody join to disscuss it? Thanks in advance!
For an X-band MMIC LNA with phemt, can the gate be biased with TFR(thin-film resistor) instead of inductor & microstip, since the TFR can save much die area.
I found the TFR model in the design kit is very different from resistor, E.G. a 20K ohm resistor will be no more than 1K ohm @10GHz. When do circuit simulation with model in ADS, the LNA will work still; but when doing full EM simulation with Momentum, the resistor will lead cuirt failure, even the DC current is not correct.
Gate biasing with resistor will work in LNA lower than 3GHz (I have verified), though,
I am afraid resistor can not be used for gate baising in high frequency such as X band?
Can anybody join to disscuss it? Thanks in advance!