ahmad_abdulghany
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Hi,
For simple rectangular MOS transistors, it's easy to identify width and length depending on direction of current flow.
If you've complex irregular MOS transistor (not like a spider but mostly like a rectangle having many glitches from one or both sides), is there a scientific method in this case to define W and L? Sometimes current flow is still in two orthogonal directions but we've different crossing areas to current flow.
I have seen before a paper talking about big W/L ratio transistors with irregular shapes, but I cant recall where did i see.
Any ideas or papers talking about that issue?
Thanks,
Ahmad
For simple rectangular MOS transistors, it's easy to identify width and length depending on direction of current flow.
If you've complex irregular MOS transistor (not like a spider but mostly like a rectangle having many glitches from one or both sides), is there a scientific method in this case to define W and L? Sometimes current flow is still in two orthogonal directions but we've different crossing areas to current flow.
I have seen before a paper talking about big W/L ratio transistors with irregular shapes, but I cant recall where did i see.
Any ideas or papers talking about that issue?
Thanks,
Ahmad