I got MOSIS file for my HSpice, anyone show me how to use it

I got following MOSIS file for my HSpice, anyone show me how to use this file in HSpice?

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MOSIS file ami-c5n/t24h-params.txt
MOSIS PARAMETRIC TEST RESULTS

RUN: T24H VENDOR: AMI
TECHNOLOGY: SCN05 FEATURE SIZE: 0.5 microns


INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.

COMMENTS: American Microsystems, Inc. C5N


TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

MINIMUM 3.0/0.6
Vth 0.81 -0.93 volts

SHORT 20.0/0.6
Idss 449 -242 uA/um
Vth 0.71 -0.91 volts
Vpt 10.0 -10.0 volts

WIDE 20.0/0.6
Ids0 < 2.5 < 2.5 pA/um

LARGE 50/50
Vth 0.73 -0.96 volts
Vjbkd 11.5 -11.7 volts
Ijlk <50.0 <50.0 pA
Gamma 0.48 0.59 V^0.5

K' (Uo*Cox/2) 59.4 -18.9 uA/V^2
Low-field Mobility 481.66 153.26 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask and
etch bias use the appropriate value for the parameter XL in your
SPICE model card.
Design Technology XL
----------------- -------
SCN_SUBM (lambda=0.30) 0.00
AMI_C5 0.00
SCN (lambda=0.35) -0.10


FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >15.0 <-15.0 volts



PROCESS PARAMETERS N+ACTV P+ACTV POLY PLY2_HR POLY2 MTL1 MTL2 UNITS
Sheet Resistance 82.2 105.2 22.0 1044 40.3 0.09 0.09 ohms/sq
Contact Resistance 62.7 160.0 15.6 26.1 0.91 ohms
Gate Oxide Thickness 140 angstrom

PROCESS PARAMETERS MTL3 N\PLY N_WELL UNITS
Sheet Resistance 0.05 817 808 ohms/sq
Contact Resistance 0.83 ohms


COMMENTS: N\POLY is N-well under polysilicon.


CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY POLY2 M1 M2 M3 N_WELL UNITS
Area (substrate) 427 732 86 30 15 10 40 aF/um^2
Area (N+active) 2463 35 15 11 aF/um^2
Area (P+active) 2372 aF/um^2
Area (poly) 944 51 15 9 aF/um^2
Area (poly2) 44 aF/um^2
Area (metal1) 28 12 aF/um^2
Area (metal2) 34 aF/um^2
Fringe (substrate) 316 251 69 53 35 aF/um
Fringe (poly) 53 36 27 aF/um
Fringe (metal1) 49 33 aF/um
Fringe (metal2) 56 aF/um
Overlap (N+active) 195 aF/um
Overlap (P+active) 276 aF/um



CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 2.03 volts
Vinv 1.5 2.29 volts
Vol (100 uA) 2.0 0.12 volts
Voh (100 uA) 2.0 4.86 volts
Vinv 2.0 2.47 volts
Gain 2.0 -19.82
Ring Oscillator Freq.
DIV256 (31-stg,5.0V) 94.12 MHz
D256_WIDE (31-stg,5.0V) 149.15 MHz
Ring Oscillator Power
DIV256 (31-stg,5.0V) 0.48 uW/MHz/gate
D256_WIDE (31-stg,5.0V) 0.99 uW/MHz/gate

COMMENTS: SUBMICRON




 T24H SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8

* DATE: May 13/02
* LOT: T24H WAF: 2205
* Temperature_parameters=Default
.MODEL CMOSN NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 1.4E-8
+XJ = 1.5E-7 NCH = 1.7E17 VTH0 = 0.6775368
+K1 = 0.8735372 K2 = -0.09252 K3 = 22.9446272
+K3B = -7.1565482 W0 = 1E-8 NLX = 1E-9
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 2.7144655 DVT1 = 0.4204079 DVT2 = -0.1275288
+U0 = 461.8732613 UA = 1E-13 UB = 1.501112E-18
+UC = 1.675596E-11 VSAT = 1.531186E5 A0 = 0.616569
+AGS = 0.1286972 B0 = 2.554049E-6 B1 = 5E-6
+KETA = -2.8602E-3 A1 = 7.726694E-5 A2 = 0.3957875
+RDSW = 1.480976E3 PRWG = 0.0346055 PRWB = 0.0223913
+WR = 1 WINT = 2.539523E-7 LINT = 2.902308E-8
+XL = 0 XW = 0 DWG = -1.435135E-8
+DWB = 5.987793E-8 VOFF = -4.787029E-5 NFACTOR = 0.9511538
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 0.0122698 ETAB = -6.151094E-4
+DSUB = 0.1812673 PCLM = 2.5210541 PDIBLC1 = -0.604743
+PDIBLC2 = 2.365813E-3 PDIBLCB = -0.454025 DROUT = 0.6321327
+PSCBE1 = 5.657748E8 PSCBE2 = 6.435814E-5 PVAG = 0
+DELTA = 0.01 RSH = 82.2 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 1.95E-10 CGSO = 1.95E-10 CGBO = 1E-9
+CJ = 4.231655E-4 PB = 0.99 MJ = 0.4454994
+CJSW = 3.304372E-10 PBSW = 0.1 MJSW = 0.1145032
+CJSWG = 1.64E-10 PBSWG = 0.1 MJSWG = 0.1145032
+CF = 0 PVTH0 = 0.0292216 PRDSW = 7.562674
+PK2 = -0.0322959 WKETA = -0.0189795 LKETA = 6.626448E-4 )
*
.MODEL CMOSP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 1.4E-8
+XJ = 1.5E-7 NCH = 1.7E17 VTH0 = -0.9312283
+K1 = 0.5572696 K2 = 8.865653E-3 K3 = 6.7191071
+K3B = -0.4856897 W0 = 1E-8 NLX = 7.776038E-8
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 2.4463197 DVT1 = 0.5312439 DVT2 = -0.1011677
+U0 = 217.654166 UA = 3.006942E-9 UB = 1E-21
+UC = -5.44138E-11 VSAT = 1.781962E5 A0 = 0.9161673
+AGS = 0.1505606 B0 = 6.473147E-7 B1 = 5E-6
+KETA = -2.807704E-3 A1 = 0 A2 = 0.3
+RDSW = 3E3 PRWG = -0.0157547 PRWB = -1.536174E-4
+WR = 1 WINT = 2.95678E-7 LINT = 4.60068E-8
+XL = 0 XW = 0 DWG = -1.882013E-8
+DWB = 2.474598E-8 VOFF = -0.0777407 NFACTOR = 0.826829
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 0.2202034 ETAB = -0.0801428
+DSUB = 1 PCLM = 2.1924635 PDIBLC1 = 0.0523732
+PDIBLC2 = 4.022548E-3 PDIBLCB = -0.0502508 DROUT = 0.2424832
+PSCBE1 = 5.333936E9 PSCBE2 = 5.212064E-10 PVAG = 0.0149963
+DELTA = 0.01 RSH = 105.2 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 2.76E-10 CGSO = 2.76E-10 CGBO = 1E-9
+CJ = 7.295767E-4 PB = 0.9640469 MJ = 0.4980484
+CJSW = 2.696414E-10 PBSW = 0.99 MJSW = 0.2916909
+CJSWG = 6.4E-11 PBSWG = 0.99 MJSWG = 0.2916909
+CF = 0 PVTH0 = 5.98016E-3 PRDSW = 14.8598424
+PK2 = 3.73981E-3 WKETA = 5.034296E-3 LKETA = -5.923638E-3 )
*

just copy and paste these model parameters in ur hspice file and simulate

Re: I got MOSIS file for my HSpice, anyone show me how to us

Do it in a clean way - Paste this in a file. and include this file like the following:-

.protect
.lib filename < simulation corner >
.unprotect