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field oxide, and stepped field plate oxide

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sam_2999

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I came across some papers that refers to the term stepped field plate where the gate oxide is made thicker near the drain of an LDMOS in a single or two steps (i.e. three levels of gate-oxide thickness) to increase breakdown voltage. How is this is different from LOCOS (field oxide growth)? Is there a paper or a book on fabrication that refers to that?

Thanks,
Sam
 

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