Extract spice file problem from L-edit TANNER.....??????????

This is an extract file of transistor NMOS when we have only one substrate ,it is inside deep n well :
***********************extract file******************************
device = MOSFET(
RLAYER=ntran;
Drain=ndiff, AREA, PERIMETER;
Gate=poly wire;
Source=ndiff, AREA, PERIMETER;
Bulk=subs;
MODEL=NMOS;
)
**************************************************************

This is a spice file extracted
********************spice file extracted**************************

M1 24 NG2 out2 GND NMOS
M2 23 NG1 out2 GND NMOS
M3 22 NG0 out2 GND NMOS
M4 24 out1 GND GND NMOS
M5 23 out1 GND GND NMOS
M6 22 out1 GND GND NMOS
M7 GND out1 out1 GND NMOS
M8 GND Vin 2 GND NMOS
******************************************
However we draw in L-edit TANNER many substrates related to GND , 0.2v ,-0.1V because each other is inside deep n well .
we find only GND related to the bulk.and there isn't 0.2V and -0.1V

Re: Extract spice file problem from L-edit TANNER.....??????

fasto2008 said:

... many substrates related to GND , 0.2v ,-0.1V because each other is inside deep n well .
we find only GND related to the bulk.and there isn't 0.2V and -0.1V

Click to expand...

If the individual p-substrates (inside the deep n well) each are contacted via a p+diffusion directly via metal to GND, there's no reason for a potential difference to GND. At least no more reason than for any other GND connection. This all depends on the extraction rules.
But may be I've misunderstood you?