Zorbas-E-
Newbie level 6
advanced_asic_chip_synthesis_-_bhatnagar.pdf
Hello!
I was looking the other day at a .lib file for some libraries used, trying to find out how power is calculated by power estimatiob tools out of the library data provided
for each cell.
So, for each cell the library provides the following:
internal power which has two components fall_power and rise_power and
leakage power. example:
cell (XXXXXX) {
area : 598.6896 ;
cell_footprint : blablabla ;
dont_touch : true ;
..
..
..
delay_tables here
..
..
internal_power () {
related_pin : "CLKIN" ;
fall_power (energy_template_2x2) {
index_1 ("....") ;
index_2 ("....") ;
values ("....") ; <--table
}
rise_power (energy_template_2x2) {
index_1 ("...") ;
index_2 ("...") ;
values ("....") ; <--table
}
}
}
cell_leakage_power : 223502.753119 ;
Ok, now cell leakage power is pretty straightforward. Leakage for specified PVT. But what about internal power? The only power component that I know dependent on rise and fall times is Short-Circuit power or crowbar current power for CMOS circuits.
Does this mean that within a cell only short-circuit power and leakage are calculated and then dynamic(switching power) is calculated out of the switching activity per interconnect and capacitances out of wire load models?
To which power components do these info in the library correspond?
Thanx!!
Hello!
I was looking the other day at a .lib file for some libraries used, trying to find out how power is calculated by power estimatiob tools out of the library data provided
for each cell.
So, for each cell the library provides the following:
internal power which has two components fall_power and rise_power and
leakage power. example:
cell (XXXXXX) {
area : 598.6896 ;
cell_footprint : blablabla ;
dont_touch : true ;
..
..
..
delay_tables here
..
..
internal_power () {
related_pin : "CLKIN" ;
fall_power (energy_template_2x2) {
index_1 ("....") ;
index_2 ("....") ;
values ("....") ; <--table
}
rise_power (energy_template_2x2) {
index_1 ("...") ;
index_2 ("...") ;
values ("....") ; <--table
}
}
}
cell_leakage_power : 223502.753119 ;
Ok, now cell leakage power is pretty straightforward. Leakage for specified PVT. But what about internal power? The only power component that I know dependent on rise and fall times is Short-Circuit power or crowbar current power for CMOS circuits.
Does this mean that within a cell only short-circuit power and leakage are calculated and then dynamic(switching power) is calculated out of the switching activity per interconnect and capacitances out of wire load models?
To which power components do these info in the library correspond?
Thanx!!