need a help on GIDL and DIBL

gidl mechanism

Hello this is mujtaba ahmed from hyd

i am new to this forum
So can anyone help me regarding GIDL( gate induced barrier leakage) and DIBL(drain induced barrier lowering)
i am unable to understand this concept clearly
i am getting confused with thes two topics
Plz if anyone can help me
bye take care

Hi,
GIDL:gate induced drain leakage is a leakage mechanism from the gate-drain overlap region caused when the Drain voltage is very high and Gate voltage is very low.The reverse biased pn junction will undergo band to band tunneling in which the elctrons tunnel from the valence band of the n-type tunnel into the conduction band of the p-type and the holes tunnel vice-versa.This results in a leakage current through the gate oxide.
DIBLrain induced barrier lowering is related to the reduction in the threshhold voltage of the trainsistor due to the large depletion region created by the Drain potential.U can think of it as-since already a part of the region under the gate is depleted by the drain, only a little amount of gate potential is needed to complete depletion in the rest of the area.This means a lower threshhold voltage.