Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
If I understood your question correct; yes, you're correct somehow, but generally, it depends on the noise margin needed, and inversion levels aimed.
in case of MOSFET in saturation, it will be better as an inverter than another one in triode region, however, it's relative issue as i mentioned above.
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
