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Differences between SiGe and Si technologies in VCO design

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zhouchunyu

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SiGe VCO

I want to kown the differences between SiGe and Si technologies for the design of the VCO topology
 

Re: SiGe VCO

SiGe technology is a BICMOS technology that include HBT "hetrojunction Bipolar Transisitor" the base of this tarnsistor is a SiGe which make the devices very fast FT typically about 60 to 70 GHz

so u can use these HBT's in VCO desing like cmos cross coupled pair

khouly
 

Re: SiGe VCO

SiGe has lower flicker noise contribution to close-in phase noise.
 

Re: SiGe VCO

I did not think that SiGe had lower flicker noise than Si. SiGe works at higher frequency, but adding that doping would raise the flicker noise in SiGe, would it not?
 

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