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In NMOS transistors, the silicon channel between the source and drain is of p-type silicon. When a positive voltage is placed on the gate electrode, it repulses the holes in the p-type material forming a conducting (pseudo n-type) channel and turning the transistor on. A negative voltage turns the transistor off. With a PMOS transistor, the opposite occurs. A positive voltage on the gate turns the transistor off, and a negative voltage turns it on. NMOS transistors switch faster than PMOS.
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