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Depends what is happening. Usually it means that gate is shorted to channel or S/D areas are shorted. So th ecurrent should be higher due to a short.
Usually you have destructive effects during ESD pulse.
hi,
it depends for exemple if u manipulate Antifuse u need a high volatge (for FPGA antifuse or others like SAF single Antifuse), si a high current is needed.
I work in Antifuse domain, don't hesitate to ask me
regards.
g@fsos
In fact Breakdown refer to voltage rather than current.
The braekdown voltage is the voltage over which the electric field under the oxyde is too high, and thus the oxyde breaks down and destroy the tansistor.
Whatever your techno is, you should increase the width of the transistor to withstand high current. The voltage should be kept below the breakdown specified by the techno provider.
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