pyoojeng
Newbie level 1
Hi, i'm simulating SONOS memory with Sentaurus TCAD.
I'm experimenting with SONOS sdevice file existing in existed sentaurus.
That's code is below here.
You can see more information , sde name in existed sentaurus file.
I want to see that memory is working by "HEI" and "HH with BTB Tunneling".
For example, I would like to experiment with applying a constant 5V to the gate and 3V to the drain to get the electrons in to the trap.
Conversely, in the case of HH, I would like to experiment with applying a constant -5V to the gate and 3V to the drain to get the holes in to the trap.
In case of erase, I want to experiment with BTB tunneling besides HH.
Where can i add any phrases to work like above?
And then how can i change the gate or drain voltage over time?
Please help me :sad:
I'm experimenting with SONOS sdevice file existing in existed sentaurus.
That's code is below here.
Code:
==========================================================================
Electrode {
{Name="gate" Voltage= 0 Material= "PolySi"
Voltage=(
!(
set t1p 0
for { set i 1 } { $i <= @cycles@ } { incr i } {
set t2p [expr $t1p + 1e-6]
set t3p [expr $t1p + (@dtp@*1e-3)]
set t4p [expr $t2p + (@dtp@*1e-3)]
set t1e [expr $t3p + 2.5e-3]
set t2e [expr $t1e + 1e-6]
set t3e [expr $t1e + (@dte@*1e-3)]
set t4e [expr $t2e + (@dte@*1e-3)]
puts " 0 at [format %0.6e $t1p], @Vgp@ at [format %0.6e $t2p], @Vgp@ at [format %0.6e $t3p], 0 at [format %0.6e $t4p],"
puts " 0 at [format %0.6e $t1e], @Vge@ at [format %0.6e $t2e], @Vge@ at [format %0.6e $t3e], 0 at [format %0.6e $t4e],"
set t1p [expr $t3e + 5e-3]
}
)!
)}
{Name="substrate" Voltage= 0}
{Name="drain" Voltage= 0}
{Name="source" Voltage= 0}
}
Physics {
eBarrierTunneling "Gateoxb_Substrate"
hBarrierTunneling "Gateoxb_Substrate"
eBarrierTunneling "Gateoxt_Polygate"
hBarrierTunneling "Gateoxt_Polygate"
}
Physics(Material="Silicon") {
Recombination(SRH(DopingDependence))
Mobility(DopingDependence HighFieldSaturation)
}
Physics(Material="NitrideAsSemiconductor") {
Traps(
(Donor Level EnergyMid= 2.5 FromConductionBand
Conc= 1e19
eXSection= 1e-13 hXSection= 1e-13
eBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
hBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
PooleFrenkel
TrapVolume= 1e-15
)
(Acceptor Level EnergyMid= 1.0 FromConductionBand
Conc= 1e19
eXSection= 1e-13 hXSection= 1e-13
eBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
hBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
PooleFrenkel
TrapVolume= 1e-15
)
)
}
=================================================================You can see more information , sde name in existed sentaurus file.
I want to see that memory is working by "HEI" and "HH with BTB Tunneling".
For example, I would like to experiment with applying a constant 5V to the gate and 3V to the drain to get the electrons in to the trap.
Conversely, in the case of HH, I would like to experiment with applying a constant -5V to the gate and 3V to the drain to get the holes in to the trap.
In case of erase, I want to experiment with BTB tunneling besides HH.
Where can i add any phrases to work like above?
And then how can i change the gate or drain voltage over time?
Please help me :sad:
Last edited by a moderator: