Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Register Log in

Breakdown Voltage of TSMC0.18um CMOS

Status
Not open for further replies.
pancho_hideboo

pancho_hideboo

Advanced Member level 5
Joined
Oct 21, 2006
Messages
2,847
Helped
767
Reputation
1,536
Reaction score
733
Trophy points
1,393
Location
Real Homeless
Activity points
17,490
I can not find out descriptions about following breakdown voltage in TSMC0.18um CMOS documentations.

wBvg : gate oxide breakdown voltage
wBvds : drain-source breakdown voltage

However I can find only supply voltage specification in documents.
Specification are :
1.8Volts + 10% = 2.0Volts
3.3Volts + 10% = 3.6Volts

https://www.edaboard.com/showthread.php?t=289258#4
https://www.edaboard.com/showthread.php?t=101992#2
https://www.edaboard.com/showthread.php?t=82605

Are they true for wBvg and wBvds ?
wBvg=2.0Volts, wBvds=2.0Volts for 1.8Volts MOSFET
wBvg=3.6Volts, wBvds=3.6Volts for 3.3Volts MOSFET

For 1.8Volts-MOSFET and 3.3Volts-MOSFET, what values are forced as these breakdown voltage ?
 
Last edited:

These voltages are reliability rules and probably far
from "hard breakdown" - more likely hot carrier (Vds)
and gate oxide integrity (Vgs, Vgb, Vgd) lifetime
basis.

You -might- find some applications collateral at TSMC
or be able to coax some from their foundry applications
folks.

True D-S breakdown character will change a lot with L
and with "voltage family" and any degrees of freedom
attending drain extensions (digital vs analog/RF) etc.
You can bet it happens further out than the "foam
helmet" user design limit values, but how much so is
going to swing wide.
 

pancho_hideboo said:
wBvg=2.0Volts, wBvds=2.0Volts for 1.8Volts MOSFET
wBvg=3.6Volts, wBvds=3.6Volts for 3.3Volts MOSFET
Are they true for wBvg and wBvds ?
Click to expand...

Gate oxide breakdown depends (mainly) on its thickness tox. TSMC 0.18um tox=4.1nm, so it should be good for BVg≈4V (s. PDF below), i.e. wBvg=2.0Volts for 1.8Volts MOSFETs should be conservative, i.e. safe.

View attachment Deep_Submicron_CMOS_Circuit_Design---Simulator_in_hands_p.3-39.pdf

... as well as wBvds=2.0Volts for 1.8Volts MOSFETs, even for Lmin.

I'm not sure about the 3.3Volts MOSFET oxide thickness (AFAIR 7nm), so the wBvg=3.6Volts for 3.3Volts MOSFETs should also be far away from its assumable breakdown voltage BVg≈7V. As dick_freebird stated above, wBvds increases with L , that's why I think Lmin(3.3Volts MOSFET) > Lmin(1.8Volts MOSFET).
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top