Difference between Mosfet Technologies

Almost all modern silicon power MOSFETs are made
in planar (i.e. not mesa epitaxial) technologies, since
this is where the best equipment, cheapest, is had
(due to IC segment volumes).

The many "technologies" are really basically a few
things, which the companies in this niche try their
best to "differentiate" and lawyer up (patent). It's
all about on resistance, blocking voltage, switching
losses and sometimes stuff like how the body diode
behaves (fast recovery, etc.). They play with the
details of body and "neck" and drift region vertical
profiles, they play a lot with how the ends of fingers
(for stripe style) are "terminated" (trench, rounded
corners, smooth junction radii, field plates).

Hexfet was the hexagonal cellular style of MOSFET
which really opened things up performance / area
-wise. But stripe styles seem to have kept parity.

But none of this matters to you as a component
selector - what you need is there in the data sheets
(if you peel back a layer or two). Everything they do
is just to optimize the dimensions of performance
(Ron, BVdss, Cxxx) and drive out cost (drive up
areal conduction density without driving up lateral
area needed to stand off voltage). Picking out the
FET that does the job at a price you are willing to
pay, doesn't really have much to do with what a
vendor calls its technology - the proof, as they
say, is in the pudding.