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layout effects in compare to higher and lower node

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rakesh76

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Hi,
Please any explain does the layout effects like latch up, EMIR,wpe,sti etc will impact with the technology shrinking I mean does it increase or decrease with technology shrinking?
 

In general, RC parasitics - capacitance and especially resistance - are increased with technology scaling (and after 16nm they increase at an exponential rate).
Therefore, IR, EM, RC delays, and other related effects are becoming more severe.

Many things related to device are also changed, with MOSFET architecture changed from planar to FinFET (discreteness of "channel width", temperature dependencies, self-heating, ...).
 

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