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MOSFET channel segmentation

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amir_rch

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A long-channel MOS device can be viewed as a series connection of several short intrinsic MOS devices with the drains and sources of adjacent devices connected to each other. If a device of length L μm is broken into N segments, each of the channel segments has length of
L/N μm.
how to spurious overlap capacitances and junction diodes need to be turned off for the sub-devices that are not connected to the drain or source of the composite device, as shown in figure ?
how to nulling the parameters CGS0, CGS1, CGD0, CGD1 and CGB0 will zero the ov 212.jpgerlap capacitance.
 

I don't agree with this. I have found that (say) two 0.5um
long devices in cascode (self-cascode, common gate) act
differently than one L=1.0um. Built, tested. You can "view"
it how you like, just saying that you're probably missing
some of reality.
 

If you have a long-channel transistor, and its (accurate) SPICE model - why do you anything else? Why do you want to fracture it?

Often, people do the opposite - stacking several transistors in series, to increase their breakdown voltage.
In that case, each device has a correct SPICE model, so overall behavior of the simulation model is very accurate...
 

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