Mapuia
Junior Member level 3
When using an Si PN diode as a temperature sensor, I think it would be best to keep the bias current low in order to minimize self-heating and the effect of the ohmic resistance. Is this correct?
For example, would biasing a 1N4148 at around 0.1mA be OK to sense a narrow temperature range, roughly 0-10 deg C ? (I know there are dedicated temperature sensors but, for reasons which are not relevant here, it's more convenient for me to use a diode in a project).
For example, would biasing a 1N4148 at around 0.1mA be OK to sense a narrow temperature range, roughly 0-10 deg C ? (I know there are dedicated temperature sensors but, for reasons which are not relevant here, it's more convenient for me to use a diode in a project).