Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Register Log in

FDSOI: Concept of Secondary Gates (Buried Gates)

Status
Not open for further replies.
M

meeyaw

Junior Member level 3
Joined
Nov 29, 2010
Messages
26
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,482
Hi Brilliant People,

I am currently studying this new type of transistor technology called the FDSOI. I am confused or know little about how these secondary gate are achieved/work and how is it related to its bulk bias potential?

And how is Vt is adjusted by placing P or N well beneath the channel and the buried insulator?

Thanks,
Meeyaw
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top