Determining parameters from BSIM model

mobility parameters of bsim models

Hi all,

Can somedbody tell me if it is possible to determine kp and kn, cox from a BSIM model?


In a BSIM model what is the unit of u0 (U0)?

-Jayson

equation for rsh and rdsw

In theory you sure can, but that's not the best way. The easy and reliable way is to run a simple simulation then derive kn, kp.
By the way, cox' is easy to calculate - you know how.

bsim cox

u0 is in SI unit, so m²/(V×s).
as for calculating kn/kp it's a bit triky. Indeed BSIM uses binning. It means that the value of the parameters are adjusted depending on the size of the transistor. For example, if the mobility says 0.004, when doing the calculation it will vary with the L& W and become 0.0045 or 0.0035. The variation depend on the parameters Lu0, Wu0, Pu0. The simple equation is:
u0 = u0 + Wu0/W + Lu0/L + Pu0/(L*W)
So if you want the value used by your simulator, you need to do the same calculationas BSIM (the C code ans equation are available).
It migth be easier to do as blue2lucy said, but remember that the results are valid only for a limited range of W/L
Hope it helps

bsim3 manual level 8

Jayson said:

Hi all,

Can somedbody tell me if it is possible to determine kp and kn, cox from a BSIM model?


In a BSIM model what is the unit of u0 (U0)?

-Jayson

Click to expand...

Hello Jayson!

here is a sample MOS model for the TSMC 0.18 micron process




MOSIS WAFER ACCEPTANCE TESTS

RUN: T4BK (MM_NON-EPI_THK-MTL) VENDOR: TSMC
TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns


INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.

COMMENTS: DSCN6M018_TSMC


TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

MINIMUM 0.27/0.18
Vth 0.50 -0.53 volts

SHORT 20.0/0.18
Idss 571 -266 uA/um
Vth 0.51 -0.53 volts
Vpt 4.7 -5.5 volts

WIDE 20.0/0.18
Ids0 22.0 -5.6 pA/um

LARGE 50/50
Vth 0.42 -0.41 volts
Vjbkd 3.1 -4.1 volts
Ijlk <50.0 <50.0 pA

K' (Uo*Cox/2) 171.8 -36.3 uA/V^2
Low-field Mobility 398.02 84.10 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology XL (um) XW (um)
----------------- ------- ------
SCN6M_DEEP (lambda=0.09) 0.00 -0.01
thick oxide 0.00 -0.01
SCN6M_SUBM (lambda=0.10) -0.02 0.00
thick oxide -0.02 0.00


FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >6.6 <-6.6 volts



PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS
Sheet Resistance 6.6 7.5 7.7 61.0 317.1 0.08 0.08 ohms/sq
Contact Resistance 10.1 10.6 9.3 4.18 ohms
Gate Oxide Thickness 40 angstrom

PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS
Sheet Resistance 0.08 991.5 0.08 0.08 0.01 941 ohms/sq
Contact Resistance 8.97 14.09 18.84 21.44 ohms


COMMENTS: BLK is silicide block.


CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS
Area (substrate) 998 1152 103 39 19 13 9 8 3 129 127 aF/um^2
Area (N+active) 8566 54 21 14 11 10 9 aF/um^2
Area (P+active) 8324 aF/um^2
Area (poly) 64 18 10 7 6 5 aF/um^2
Area (metal1) 44 16 10 7 5 aF/um^2
Area (metal2) 38 15 9 7 aF/um^2
Area (metal3) 40 15 9 aF/um^2
Area (metal4) 37 14 aF/um^2
Area (metal5) 36 1003 aF/um^2
Area (r well) 987 aF/um^2
Area (d well) 574 aF/um^2
Area (no well) 139 aF/um^2
Fringe (substrate) 244 201 18 61 55 43 25 aF/um
Fringe (poly) 69 39 29 24 21 19 aF/um
Fringe (metal1) 61 35 23 21 aF/um
Fringe (metal2) 54 37 27 24 aF/um
Fringe (metal3) 56 34 31 aF/um
Fringe (metal4) 58 40 aF/um
Fringe (metal5) 61 aF/um
Overlap (P+active) 652 aF/um



CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 0.74 volts
Vinv 1.5 0.78 volts
Vol (100 uA) 2.0 0.08 volts
Voh (100 uA) 2.0 1.63 volts
Vinv 2.0 0.82 volts
Gain 2.0 -23.33
Ring Oscillator Freq.
D1024_THK (31-stg,3.3V) 338.22 MHz
DIV1024 (31-stg,1.8V) 402.84 MHz
Ring Oscillator Power
D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate
DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate

COMMENTS: DEEP_SUBMICRON




 T4BK SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8

* DATE: Jan 21/05
* LOT: T4BK WAF: 3004
* Temperature_parameters=Default
.MODEL CMOSN NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3662648
+K1 = 0.5802748 K2 = 3.124029E-3 K3 = 1E-3
+K3B = 3.3886871 W0 = 1E-7 NLX = 1.766159E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 1.2312416 DVT1 = 0.3849841 DVT2 = 0.0161351
+U0 = 265.1889031 UA = -1.506402E-9 UB = 2.489393E-18
+UC = 5.621884E-11 VSAT = 1.017932E5 A0 = 2
+AGS = 0.4543117 B0 = 3.433489E-7 B1 = 5E-6
+KETA = -0.0127714 A1 = 1.158074E-3 A2 = 1
+RDSW = 136.5582806 PRWG = 0.5 PRWB = -0.2
+WR = 1 WINT = 0 LINT = 1.702415E-8
+XL = 0 XW = -1E-8 DWG = -4.211574E-9
+DWB = 1.107719E-8 VOFF = -0.0948017 NFACTOR = 2.1860065
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 3.335516E-3 ETAB = 6.028975E-5
+DSUB = 0.0214781 PCLM = 0.6602119 PDIBLC1 = 0.1605325
+PDIBLC2 = 3.287142E-3 PDIBLCB = -0.1 DROUT = 0.7917811
+PSCBE1 = 6.420235E9 PSCBE2 = 4.122516E-9 PVAG = 0.0347169
+DELTA = 0.01 RSH = 6.6 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 8.06E-10 CGSO = 8.06E-10 CGBO = 1E-12
+CJ = 9.895609E-4 PB = 0.8 MJ = 0.3736889
+CJSW = 2.393608E-10 PBSW = 0.8 MJSW = 0.1537892
+CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1537892
+CF = 0 PVTH0 = -1.73163E-3 PRDSW = -1.4173554
+PK2 = 1.600729E-3 WKETA = 1.601517E-3 LKETA = -3.255127E-3
+PU0 = 5.2024473 PUA = 1.584315E-12 PUB = 7.446142E-25
+PVSAT = 1.686297E3 PETA0 = 1.001594E-4 PKETA = -2.039532E-3 )

.MODEL CMOSP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3708038
+K1 = 0.5895473 K2 = 0.0235946 K3 = 0
+K3B = 13.8642028 W0 = 1E-6 NLX = 1.517201E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 0.7885088 DVT1 = 0.2564577 DVT2 = 0.1
+U0 = 103.0478426 UA = 1.049312E-9 UB = 2.545758E-21
+UC = -1E-10 VSAT = 1.645114E5 A0 = 1.627879
+AGS = 0.3295499 B0 = 5.207699E-7 B1 = 1.370868E-6
+KETA = 0.0296157 A1 = 0.4449009 A2 = 0.3
+RDSW = 306.5789827 PRWG = 0.5 PRWB = 0.5
+WR = 1 WINT = 0 LINT = 2.761033E-8
+XL = 0 XW = -1E-8 DWG = -2.433889E-8
+DWB = -9.34648E-11 VOFF = -0.0867009 NFACTOR = 2
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 1.018318E-3 ETAB = -3.206319E-4
+DSUB = 1.094521E-3 PCLM = 1.3281073 PDIBLC1 = 2.394169E-3
+PDIBLC2 = -3.255915E-6 PDIBLCB = -1E-3 DROUT = 0
+PSCBE1 = 4.881933E10 PSCBE2 = 5E-10 PVAG = 2.0932623
+DELTA = 0.01 RSH = 7.5 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 6.52E-10 CGSO = 6.52E-10 CGBO = 1E-12
+CJ = 1.157423E-3 PB = 0.8444261 MJ = 0.4063933
+CJSW = 1.902456E-10 PBSW = 0.8 MJSW = 0.3550788
+CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.3550788
+CF = 0 PVTH0 = 1.4398E-3 PRDSW = 0.5073407
+PK2 = 2.190431E-3 WKETA = 0.0442978 LKETA = -2.936093E-3
+PU0 = -0.9769623 PUA = -4.34529E-11 PUB = 1E-21
+PVSAT = -50 PETA0 = 1.002762E-4 PKETA = -6.740436E-3 )

The tox, u0, and Vth0 are indicated specially in the above model file!

Thus kn, kp maybe computed!
:-D

Hope this helps

bsim3 k1

For the NMOS in the model would the kn (u0*3.9*eo/tox) be approximately 228.9 uA/V^2, or did I mess up my unit conversions?


-Jayson

bsim4 transistor parameters

I find the beta parameter in spectre simulation result browser. if this is the same as the Kp or Kn??

I calculate the result it seems the same.

- alchen

bsim3 + determine vth

hi what ever the model file you have downloaded is ok and the value of k' given is diveded by 2. So multiply that value with 2 to get actual value for kn' and kp'. These values have been taken and simulated for proper behaviour of deisgn.
regards
rajnov

Hello,

I'm using HSPICE and BSIM4 MOSFET models to simulate an nmos. If I want to find the gate capacitance of an nmos when it is ON, would it be enough just to read the capacitance at the gate node of this device when Vgs and Vds are set at Vdd?

Thanks

Re: bsim3 manual level 8

v_naren said:

Hello Jayson!

here is a sample MOS model for the TSMC 0.18 micron process




MOSIS WAFER ACCEPTANCE TESTS

RUN: T4BK (MM_NON-EPI_THK-MTL) VENDOR: TSMC
TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns


INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.

COMMENTS: DSCN6M018_TSMC


TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

MINIMUM 0.27/0.18
Vth 0.50 -0.53 volts

SHORT 20.0/0.18
Idss 571 -266 uA/um
Vth 0.51 -0.53 volts
Vpt 4.7 -5.5 volts

WIDE 20.0/0.18
Ids0 22.0 -5.6 pA/um

LARGE 50/50
Vth 0.42 -0.41 volts
Vjbkd 3.1 -4.1 volts
Ijlk <50.0 <50.0 pA

K' (Uo*Cox/2) 171.8 -36.3 uA/V^2
Low-field Mobility 398.02 84.10 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology XL (um) XW (um)
----------------- ------- ------
SCN6M_DEEP (lambda=0.09) 0.00 -0.01
thick oxide 0.00 -0.01
SCN6M_SUBM (lambda=0.10) -0.02 0.00
thick oxide -0.02 0.00


FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >6.6 <-6.6 volts



PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS
Sheet Resistance 6.6 7.5 7.7 61.0 317.1 0.08 0.08 ohms/sq
Contact Resistance 10.1 10.6 9.3 4.18 ohms
Gate Oxide Thickness 40 angstrom

PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS
Sheet Resistance 0.08 991.5 0.08 0.08 0.01 941 ohms/sq
Contact Resistance 8.97 14.09 18.84 21.44 ohms


COMMENTS: BLK is silicide block.


CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS
Area (substrate) 998 1152 103 39 19 13 9 8 3 129 127 aF/um^2
Area (N+active) 8566 54 21 14 11 10 9 aF/um^2
Area (P+active) 8324 aF/um^2
Area (poly) 64 18 10 7 6 5 aF/um^2
Area (metal1) 44 16 10 7 5 aF/um^2
Area (metal2) 38 15 9 7 aF/um^2
Area (metal3) 40 15 9 aF/um^2
Area (metal4) 37 14 aF/um^2
Area (metal5) 36 1003 aF/um^2
Area (r well) 987 aF/um^2
Area (d well) 574 aF/um^2
Area (no well) 139 aF/um^2
Fringe (substrate) 244 201 18 61 55 43 25 aF/um
Fringe (poly) 69 39 29 24 21 19 aF/um
Fringe (metal1) 61 35 23 21 aF/um
Fringe (metal2) 54 37 27 24 aF/um
Fringe (metal3) 56 34 31 aF/um
Fringe (metal4) 58 40 aF/um
Fringe (metal5) 61 aF/um
Overlap (P+active) 652 aF/um



CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 0.74 volts
Vinv 1.5 0.78 volts
Vol (100 uA) 2.0 0.08 volts
Voh (100 uA) 2.0 1.63 volts
Vinv 2.0 0.82 volts
Gain 2.0 -23.33
Ring Oscillator Freq.
D1024_THK (31-stg,3.3V) 338.22 MHz
DIV1024 (31-stg,1.8V) 402.84 MHz
Ring Oscillator Power
D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate
DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate

COMMENTS: DEEP_SUBMICRON




 T4BK SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8

* DATE: Jan 21/05
* LOT: T4BK WAF: 3004
* Temperature_parameters=Default
.MODEL CMOSN NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3662648
+K1 = 0.5802748 K2 = 3.124029E-3 K3 = 1E-3
+K3B = 3.3886871 W0 = 1E-7 NLX = 1.766159E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 1.2312416 DVT1 = 0.3849841 DVT2 = 0.0161351
+U0 = 265.1889031 UA = -1.506402E-9 UB = 2.489393E-18
+UC = 5.621884E-11 VSAT = 1.017932E5 A0 = 2
+AGS = 0.4543117 B0 = 3.433489E-7 B1 = 5E-6
+KETA = -0.0127714 A1 = 1.158074E-3 A2 = 1
+RDSW = 136.5582806 PRWG = 0.5 PRWB = -0.2
+WR = 1 WINT = 0 LINT = 1.702415E-8
+XL = 0 XW = -1E-8 DWG = -4.211574E-9
+DWB = 1.107719E-8 VOFF = -0.0948017 NFACTOR = 2.1860065
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 3.335516E-3 ETAB = 6.028975E-5
+DSUB = 0.0214781 PCLM = 0.6602119 PDIBLC1 = 0.1605325
+PDIBLC2 = 3.287142E-3 PDIBLCB = -0.1 DROUT = 0.7917811
+PSCBE1 = 6.420235E9 PSCBE2 = 4.122516E-9 PVAG = 0.0347169
+DELTA = 0.01 RSH = 6.6 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 8.06E-10 CGSO = 8.06E-10 CGBO = 1E-12
+CJ = 9.895609E-4 PB = 0.8 MJ = 0.3736889
+CJSW = 2.393608E-10 PBSW = 0.8 MJSW = 0.1537892
+CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1537892
+CF = 0 PVTH0 = -1.73163E-3 PRDSW = -1.4173554
+PK2 = 1.600729E-3 WKETA = 1.601517E-3 LKETA = -3.255127E-3
+PU0 = 5.2024473 PUA = 1.584315E-12 PUB = 7.446142E-25
+PVSAT = 1.686297E3 PETA0 = 1.001594E-4 PKETA = -2.039532E-3 )

.MODEL CMOSP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3708038
+K1 = 0.5895473 K2 = 0.0235946 K3 = 0
+K3B = 13.8642028 W0 = 1E-6 NLX = 1.517201E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 0.7885088 DVT1 = 0.2564577 DVT2 = 0.1
+U0 = 103.0478426 UA = 1.049312E-9 UB = 2.545758E-21
+UC = -1E-10 VSAT = 1.645114E5 A0 = 1.627879
+AGS = 0.3295499 B0 = 5.207699E-7 B1 = 1.370868E-6
+KETA = 0.0296157 A1 = 0.4449009 A2 = 0.3
+RDSW = 306.5789827 PRWG = 0.5 PRWB = 0.5
+WR = 1 WINT = 0 LINT = 2.761033E-8
+XL = 0 XW = -1E-8 DWG = -2.433889E-8
+DWB = -9.34648E-11 VOFF = -0.0867009 NFACTOR = 2
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 1.018318E-3 ETAB = -3.206319E-4
+DSUB = 1.094521E-3 PCLM = 1.3281073 PDIBLC1 = 2.394169E-3
+PDIBLC2 = -3.255915E-6 PDIBLCB = -1E-3 DROUT = 0
+PSCBE1 = 4.881933E10 PSCBE2 = 5E-10 PVAG = 2.0932623
+DELTA = 0.01 RSH = 7.5 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 6.52E-10 CGSO = 6.52E-10 CGBO = 1E-12
+CJ = 1.157423E-3 PB = 0.8444261 MJ = 0.4063933
+CJSW = 1.902456E-10 PBSW = 0.8 MJSW = 0.3550788
+CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.3550788
+CF = 0 PVTH0 = 1.4398E-3 PRDSW = 0.5073407
+PK2 = 2.190431E-3 WKETA = 0.0442978 LKETA = -2.936093E-3
+PU0 = -0.9769623 PUA = -4.34529E-11 PUB = 1E-21
+PVSAT = -50 PETA0 = 1.002762E-4 PKETA = -6.740436E-3 )

The tox, u0, and Vth0 are indicated specially in the above model file!

Thus kn, kp maybe computed!
:-D

Hope this helps

Click to expand...

Would u gove me this parameters for 22nm????

- - - Updated - - -

v_naren said:

Hello Jayson!

here is a sample MOS model for the TSMC 0.18 micron process




MOSIS WAFER ACCEPTANCE TESTS

RUN: T4BK (MM_NON-EPI_THK-MTL) VENDOR: TSMC
TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns


INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.

COMMENTS: DSCN6M018_TSMC


TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

MINIMUM 0.27/0.18
Vth 0.50 -0.53 volts

SHORT 20.0/0.18
Idss 571 -266 uA/um
Vth 0.51 -0.53 volts
Vpt 4.7 -5.5 volts

WIDE 20.0/0.18
Ids0 22.0 -5.6 pA/um

LARGE 50/50
Vth 0.42 -0.41 volts
Vjbkd 3.1 -4.1 volts
Ijlk <50.0 <50.0 pA

K' (Uo*Cox/2) 171.8 -36.3 uA/V^2
Low-field Mobility 398.02 84.10 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology XL (um) XW (um)
----------------- ------- ------
SCN6M_DEEP (lambda=0.09) 0.00 -0.01
thick oxide 0.00 -0.01
SCN6M_SUBM (lambda=0.10) -0.02 0.00
thick oxide -0.02 0.00


FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >6.6 <-6.6 volts



PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS
Sheet Resistance 6.6 7.5 7.7 61.0 317.1 0.08 0.08 ohms/sq
Contact Resistance 10.1 10.6 9.3 4.18 ohms
Gate Oxide Thickness 40 angstrom

PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS
Sheet Resistance 0.08 991.5 0.08 0.08 0.01 941 ohms/sq
Contact Resistance 8.97 14.09 18.84 21.44 ohms


COMMENTS: BLK is silicide block.


CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS
Area (substrate) 998 1152 103 39 19 13 9 8 3 129 127 aF/um^2
Area (N+active) 8566 54 21 14 11 10 9 aF/um^2
Area (P+active) 8324 aF/um^2
Area (poly) 64 18 10 7 6 5 aF/um^2
Area (metal1) 44 16 10 7 5 aF/um^2
Area (metal2) 38 15 9 7 aF/um^2
Area (metal3) 40 15 9 aF/um^2
Area (metal4) 37 14 aF/um^2
Area (metal5) 36 1003 aF/um^2
Area (r well) 987 aF/um^2
Area (d well) 574 aF/um^2
Area (no well) 139 aF/um^2
Fringe (substrate) 244 201 18 61 55 43 25 aF/um
Fringe (poly) 69 39 29 24 21 19 aF/um
Fringe (metal1) 61 35 23 21 aF/um
Fringe (metal2) 54 37 27 24 aF/um
Fringe (metal3) 56 34 31 aF/um
Fringe (metal4) 58 40 aF/um
Fringe (metal5) 61 aF/um
Overlap (P+active) 652 aF/um



CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 0.74 volts
Vinv 1.5 0.78 volts
Vol (100 uA) 2.0 0.08 volts
Voh (100 uA) 2.0 1.63 volts
Vinv 2.0 0.82 volts
Gain 2.0 -23.33
Ring Oscillator Freq.
D1024_THK (31-stg,3.3V) 338.22 MHz
DIV1024 (31-stg,1.8V) 402.84 MHz
Ring Oscillator Power
D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate
DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate

COMMENTS: DEEP_SUBMICRON




 T4BK SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8

* DATE: Jan 21/05
* LOT: T4BK WAF: 3004
* Temperature_parameters=Default
.MODEL CMOSN NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3662648
+K1 = 0.5802748 K2 = 3.124029E-3 K3 = 1E-3
+K3B = 3.3886871 W0 = 1E-7 NLX = 1.766159E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 1.2312416 DVT1 = 0.3849841 DVT2 = 0.0161351
+U0 = 265.1889031 UA = -1.506402E-9 UB = 2.489393E-18
+UC = 5.621884E-11 VSAT = 1.017932E5 A0 = 2
+AGS = 0.4543117 B0 = 3.433489E-7 B1 = 5E-6
+KETA = -0.0127714 A1 = 1.158074E-3 A2 = 1
+RDSW = 136.5582806 PRWG = 0.5 PRWB = -0.2
+WR = 1 WINT = 0 LINT = 1.702415E-8
+XL = 0 XW = -1E-8 DWG = -4.211574E-9
+DWB = 1.107719E-8 VOFF = -0.0948017 NFACTOR = 2.1860065
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 3.335516E-3 ETAB = 6.028975E-5
+DSUB = 0.0214781 PCLM = 0.6602119 PDIBLC1 = 0.1605325
+PDIBLC2 = 3.287142E-3 PDIBLCB = -0.1 DROUT = 0.7917811
+PSCBE1 = 6.420235E9 PSCBE2 = 4.122516E-9 PVAG = 0.0347169
+DELTA = 0.01 RSH = 6.6 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 8.06E-10 CGSO = 8.06E-10 CGBO = 1E-12
+CJ = 9.895609E-4 PB = 0.8 MJ = 0.3736889
+CJSW = 2.393608E-10 PBSW = 0.8 MJSW = 0.1537892
+CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1537892
+CF = 0 PVTH0 = -1.73163E-3 PRDSW = -1.4173554
+PK2 = 1.600729E-3 WKETA = 1.601517E-3 LKETA = -3.255127E-3
+PU0 = 5.2024473 PUA = 1.584315E-12 PUB = 7.446142E-25
+PVSAT = 1.686297E3 PETA0 = 1.001594E-4 PKETA = -2.039532E-3 )

.MODEL CMOSP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 4E-9
+XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3708038
+K1 = 0.5895473 K2 = 0.0235946 K3 = 0
+K3B = 13.8642028 W0 = 1E-6 NLX = 1.517201E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 0.7885088 DVT1 = 0.2564577 DVT2 = 0.1
+U0 = 103.0478426 UA = 1.049312E-9 UB = 2.545758E-21
+UC = -1E-10 VSAT = 1.645114E5 A0 = 1.627879
+AGS = 0.3295499 B0 = 5.207699E-7 B1 = 1.370868E-6
+KETA = 0.0296157 A1 = 0.4449009 A2 = 0.3
+RDSW = 306.5789827 PRWG = 0.5 PRWB = 0.5
+WR = 1 WINT = 0 LINT = 2.761033E-8
+XL = 0 XW = -1E-8 DWG = -2.433889E-8
+DWB = -9.34648E-11 VOFF = -0.0867009 NFACTOR = 2
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 1.018318E-3 ETAB = -3.206319E-4
+DSUB = 1.094521E-3 PCLM = 1.3281073 PDIBLC1 = 2.394169E-3
+PDIBLC2 = -3.255915E-6 PDIBLCB = -1E-3 DROUT = 0
+PSCBE1 = 4.881933E10 PSCBE2 = 5E-10 PVAG = 2.0932623
+DELTA = 0.01 RSH = 7.5 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 6.52E-10 CGSO = 6.52E-10 CGBO = 1E-12
+CJ = 1.157423E-3 PB = 0.8444261 MJ = 0.4063933
+CJSW = 1.902456E-10 PBSW = 0.8 MJSW = 0.3550788
+CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.3550788
+CF = 0 PVTH0 = 1.4398E-3 PRDSW = 0.5073407
+PK2 = 2.190431E-3 WKETA = 0.0442978 LKETA = -2.936093E-3
+PU0 = -0.9769623 PUA = -4.34529E-11 PUB = 1E-21
+PVSAT = -50 PETA0 = 1.002762E-4 PKETA = -6.740436E-3 )

The tox, u0, and Vth0 are indicated specially in the above model file!

Thus kn, kp maybe computed!
:-D

Hope this helps

Click to expand...

Would u give me this parameters for 22nm????

Re: bsim3 manual level 8

ntn45ec said:

Would u give me this parameters for 22nm????

Click to expand...

As you allegiantly admitted in one of your other postings, you already own the 22nm PTM models file. Is it really so difficult to find these parameters with the same designations as in the model file above? :roll: