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If your output transistor is a MOSFET, its parasitic anti-parallel diode will take care of a max. inverse in-out voltage difference of about 1V . In case of a BJT, a small inverse in-out voltage difference (a few volts) won't matter.
If your output transistor is a MOSFET, its parasitic anti-parallel diode will take care of a max. inverse in-out voltage difference of about 1V . In case of a BJT, a small inverse in-out voltage difference (a few volts) won't matter.
I read somewhere that if input will become less than output, a reverse current may flow in opposite direction which may lead to damage the LDO.
For this particular applicatino a small reverse current may flow for short time and LDO could sustain for that, but still I am not sure.
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